Electrical and Physical Characterization of Remote Plasma Oxidized HfO2Gate Dielectrics

Kazuhiko Yamamoto, Wim Deweerd, Marc Aoulaiche, Michel Houssa, Stefan De Gendt, Sadayoshi Horii, Misayuki Asai, Atsushi Sano, Shigenori Hayashi, Masaaki Niwa

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Bi-layer gate stacks consisting of a HfO2 and an interfacial layer are fabricated by remote plasma oxidation (RPO) of Hf metal deposited on an Si substrate. Hf metal is fully oxidized by the RPO even at a temperature as low as 400 °C due to radical oxygens, leading to an improvement in the quality of HfO2 with less impact to the interfacial layer growth. An insufficient oxidation leads to a deterioration of mobility with increasing interface traps and positive bias temperature instability, which is likely caused by the oxygen vacancies acting as traps induced by the remaining Hf metal. The SiO2-like interface improves the mobility with reduced interface states. Full oxidation and the controlled SiO2-like interface demonstrate RPO as a promising way for gate-stack optimization.

本文言語English
ページ(範囲)1153-1160
ページ数8
ジャーナルIEEE Transactions on Electron Devices
53
5
DOI
出版ステータスPublished - 2006 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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