Electrical and optical characterization of defect levels caused in InGaAs by boron ion implantation

Shin'ichi Yamamura, Tadamasa Kimura, Shigemi Yugo, Riichiro Saito, Michio Murata, Takeshi Kamiya

研究成果: Article査読

抄録

Defect levels in undoped n-InGaAs caused by the implantation of boron ions and their behaviour upon post-implantation rapid thermal annealing (RTA) have been investigated. Acceptorlike electron traps, which decreased electron density, which first formed by implantation at ∼ 0.2 eV below the conduction band edge. After furtherimplantation shallow donor states, which increased electron density, appeared, and limited the maximum attainable resistivity of InGaAs to several tens of ω cm. Post-implantation RTA at 600°C reduced the electron traps and activated further the shallow donors, leading to an increase in electron density to much higher values than that of the as-grown undoped InGaAs.

本文言語English
ページ(範囲)632-635
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, B
80-81
PART 1
DOI
出版ステータスPublished - 1993 6 3
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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