Defect levels in undoped n-InGaAs caused by the implantation of boron ions and their behaviour upon post-implantation rapid thermal annealing (RTA) have been investigated. Acceptorlike electron traps, which decreased electron density, which first formed by implantation at ∼ 0.2 eV below the conduction band edge. After furtherimplantation shallow donor states, which increased electron density, appeared, and limited the maximum attainable resistivity of InGaAs to several tens of ω cm. Post-implantation RTA at 600°C reduced the electron traps and activated further the shallow donors, leading to an increase in electron density to much higher values than that of the as-grown undoped InGaAs.
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