Electrical analyses of nickel silicide formed on Si nanowires with 10-nm-width

K. Matsumoto, M. Koyama, Y. Wu, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

研究成果: Paper

抄録

Ni silicide with the nanowire line width down to 15 nm was formed by the reaction of Ni thin films with Si nanowires. The electrical analyses revealed that Ni2Si was formed on all Si nanowires having width in the range from 15 to 80 nm. However, a drastic increase in the resistivity was observed for the width smaller than 35 nm. The reason for this increase is discussed in terms of roughness in line width and electron scattering on the surface of nanowires.

本文言語English
ページ58-61
ページ数4
DOI
出版ステータスPublished - 2013
外部発表はい
イベント2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan, Province of China
継続期間: 2013 2 252013 2 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan, Province of China
CityKaohsiung
Period13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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