Electric properties of nanoscale contacts on Si(111) surfaces

R. Hasunuma, T. Komeda, H. Tokumoto

研究成果: Article査読

19 被引用数 (Scopus)

抄録

We have investigated the electric properties of nanoscale contacts on Si(111)-7 × 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique.

本文言語English
ページ(範囲)84-89
ページ数6
ジャーナルApplied Surface Science
130-132
DOI
出版ステータスPublished - 1998 6月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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