Electric field-induced transport modulation in VO2 FETs with high- k oxide/organic parylene-C hybrid gate dielectric

Tingting Wei, Teruo Kanki, Kohei Fujiwara, Masashi Chikanari, Hidekazu Tanaka

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We report on the observation of reversible and immediate resistance switching by high-k oxide Ta2O5/organic parylene-C hybrid dielectric-gated VO2 thin films. Resistance change ratios at various temperatures in the insulating regime were demonstrated to occur in the vicinity of phase transition temperature. We also found an asymmetric hole-electron carrier modulation related to the suppression of phase transition temperature. The results in this research provide a possibility for clarifying the origin of metal-insulator transition in VO2 through the electrostatic field-induced transport modulation.

本文言語English
論文番号053503
ジャーナルApplied Physics Letters
108
5
DOI
出版ステータスPublished - 2016 2 1

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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