Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions

研究成果: Review article査読

4 被引用数 (Scopus)

抄録

The electric-field effect on magnetic anisotropy provides a low-energy scheme for magnetization switching in magnetic tunnel junctions. We review our recent works on the electric-field-induced magnetization switching in CoFeB/MgO-based magnetic tunnel junctions. We show that the switching with a higher speed and a lower energy than the spin-transfer switching can be realized using the electric-field effect. The increase of the electric-field modulation ratio is expected to result in a marked reduction of the switching energy as well as in the improvement of the switching reliability for magnetic tunnel junctions with a high thermal stability factor. Further study is necessary to improve the modulation ratio.

本文言語English
論文番号0802A3
ジャーナルJapanese journal of applied physics
56
8
DOI
出版ステータスPublished - 2017 8月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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