Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

H. Nohira, K. Hirose, K. Takahashi, T. Hattori

研究成果: Conference article査読

10 被引用数 (Scopus)

抄録

The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si(100). The results of these simulations revealed a total elastic scattering cross-section of 1.5×10-20 m2 and an inelastic scattering cross-section of 1.6×10-20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness.

本文言語English
ページ(範囲)304-308
ページ数5
ジャーナルApplied Surface Science
162
DOI
出版ステータスPublished - 2000 8月 1
外部発表はい
イベント5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
継続期間: 1999 7月 61999 7月 9

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル