抄録
The mechanism of film growth of CoCr intermediate layer and CoCrPtB magnetic layer was studied by analyzing the thickness dependence of in plane x-ray diffraction (XRD) profiles and perpendicular magnetic anisotropy. The in-plane XRD profiles of intermediate layers were observed at various substrate temperature. Cr-rich hcp phase was formed in the films fabricated at 250 °C. The hcp phase was decomposed into Cr-less hcp phase with further increase in temperature.
本文言語 | English |
---|---|
ジャーナル | Digests of the Intermag Conference |
出版ステータス | Published - 2002 12 1 |
イベント | 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands 継続期間: 2002 4 28 → 2002 5 2 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering