The mechanism of film growth of CoCr intermediate layer and CoCrPtB magnetic layer was studied by analyzing the thickness dependence of in plane x-ray diffraction (XRD) profiles and perpendicular magnetic anisotropy. The in-plane XRD profiles of intermediate layers were observed at various substrate temperature. Cr-rich hcp phase was formed in the films fabricated at 250 °C. The hcp phase was decomposed into Cr-less hcp phase with further increase in temperature.
|ジャーナル||Digests of the Intermag Conference|
|出版ステータス||Published - 2002 12 1|
|イベント||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
継続期間: 2002 4 28 → 2002 5 2
ASJC Scopus subject areas
- Electrical and Electronic Engineering