Effects of TiN buffer layer thickness on GaN growth

Kazuhiro Ito, Yu Uchida, Sangjin Lee, Susumu Tsukimoto, Yuhei Ikemoto, Koji Hirata, Masanori Murakami

    研究成果: Article査読

    3 被引用数 (Scopus)

    抄録

    Smooth GaN layers were successfully grown on metallic TiN buffer layers by metalorganic chemical vapor deposition (MOCVD). One important factor in controlling GaN layer smoothness was the TiN layer thickness. We investigated systematically the effects of this thickness, and found an optimal thickness of 5 nm, at which the smallest average grain size (20 nm) and smoothest surface were obtained. The TiN layers increased surface coverage with GaN hexagons at an early stage of GaN growth, indicating that enhancing the GaN nucleation is essential for smooth GaN layer growth, and small grain size and smooth surface are needed to enhance GaN nucleation. Further reduction in TiN layer thickness to 2 nm decreased the surface coverage with GaN hexagons, and a high density of grooves and holes were observed in the surface of the 2-μm-thick GaN layers. Defect structures in the GaN layers grown on the TiN layers were remarkably changed on reduction of TiN layer thickness from 5 nm to 2 nm. GaN growth was found to be sensitive to the TiN layer thickness between 2 nm and 5 nm.

    本文言語English
    ページ(範囲)511-517
    ページ数7
    ジャーナルJournal of Electronic Materials
    38
    4
    DOI
    出版ステータスPublished - 2009 4

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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