Effects of thin SiO2 capping layer on silicon-on-insulator formation by lateral solid-phase epitaxy

K. Kusukawa, M. Ohkura, Masahiro Moniwa, M. Miyao

    研究成果: Article査読

    2 被引用数 (Scopus)

    抄録

    The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid-phase epitaxy of Si are investigated. A thin SiO 2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.

    本文言語English
    ページ(範囲)80-81
    ページ数2
    ジャーナルApplied Physics Letters
    60
    1
    DOI
    出版ステータスPublished - 1992 12 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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