Effects of thermal annealing on charge density and N chemical states in HfSiON films

T. Tanimura, H. Kamada, S. Toyoda, H. Kumigashira, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We have investigated the charge density and N chemical states in HfSiON films annealed at various oxygen gas pressures by time-dependent photoemission spectroscopy. The Si 2p core-level spectra and the sample current reveal that annealing these films at low oxygen partial pressures affects the number of inherent fixed charges and annealing at high oxygen partial pressures results in a decrease in the number of trapped charges. The N 1s spectra of the annealed HfSiON samples indicate a decrease in Hf-N bonds due to the substitution of N by O along with a decrease in the number of trapped charges.

本文言語English
論文番号082903
ジャーナルApplied Physics Letters
94
8
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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