Effects of the hole tunneling barrier width on the electrical characteristic in silicon quantum dots light-emitting diodes

Tae Youb Kim, Nae Man Park, Cheol Jong Choi, Chul Huh, Chang Geun Ahn, Gun Yong Sung, In Kyu You, Maki Suemitsu

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Electrical properties of the Silicon quantum dots (Si-QD) light-emitting diodes (LEDs), in its dependence on the nitrogen source used in the silicon nitride (SiNx ) matrix growth, have been studied. Si-QDs are formed in-situ during the SiNx film growth, and no post-annealing process for crystallization was applied. To confirm the electrical properties of the Si-QD devices, we manufacture the Si-QD LED. Both p-type and p+-type Si substrate were tested in role of hole tunneling in the LED performance. The high-resolution transmission electron microscopy (HRTEM) analyses and the current-voltage (I-V) measurement show that the Si-QDs embedded in the SiN x grown with ammonia (NH3) are located at the interface between the SiNx film and the Si substrate. This is related to the observed increase in the forward current by considering a decrease in the hole tunneling barrier width between the Si substrate and the Si-QDs.

本文言語English
論文番号04DG11
ジャーナルJapanese journal of applied physics
50
4 PART 2
DOI
出版ステータスPublished - 2011 4 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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