Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire substrates

T. Koyama, A. N. Fouda, N. Shibata, S. F. Chichibu

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched (11 2- 0) Al2 O3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.

本文言語English
論文番号073505
ジャーナルJournal of Applied Physics
102
7
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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