Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures

M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.

本文言語English
ページ(範囲)1772-1774
ページ数3
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
16
3
DOI
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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