Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures

M. Suemitsu; Y. Tsukidate; H. Nakazawa; Y. Enta

doi:10.1116/1.581300

Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures

M. Suemitsu, Y. Tsukidate, H. Nakazawa, Y. Enta

電気通信研究所・情報デバイス研究部門

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH₄/Si (100) surface has been investigated by H₂- temperature-programmed-desorption (TPD) measurements. The β₁-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θ_P=0.25 ML, and the shift increased with decreasing SiH₄ exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.

本文言語	English
ページ（範囲）	1772-1774
ページ数	3
ジャーナル	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
巻	16
号	3
DOI	https://doi.org/10.1116/1.581300
出版ステータス	Published - 1998

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜

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10.1116/1.581300

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title = "Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures",

abstract = "Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.",

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T1 - Effects of surface phosphorus on the kinetics of hydrogen desorption from silane-adsorbed Si (100) surface at room temperatures

AU - Suemitsu, M.

AU - Tsukidate, Y.

AU - Nakazawa, H.

AU - Enta, Y.

PY - 1998

Y1 - 1998

N2 - Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.

AB - Effects of presence of phosphorus on the hydrogen desorption kinetics from SiH4/Si (100) surface has been investigated by H2- temperature-programmed-desorption (TPD) measurements. The β1-TPD peak shifted toward higher temperatures by about 10 °C when phosphorus was predeposited to θP=0.25 ML, and the shift increased with decreasing SiH4 exposure. Two analyses, the Arrhenius plot and the order plot, have been applied to the TPD spectra, clarifying that the 0.25 ML phosphorus on clean Si (100) surface suppresses the hydrogen desorption by increasing both the activation energy from 2.0±0.2 to 2.5±0.1 eV and the reaction order from 1.0±0.2 to 2.0±0.2.

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