Microrod-type CoFe2O4(CFO)/Bi3.25Nd0.65Eu0.10Ti3O12(00ℓ) (BNEuT) composite thin films were fabricated by a combination of high-temperature sputtering, reactive ion etching, and metal organic chemical vapor deposition (MOCVD) on Pt(100)/MgO(100) substrates. The substrate temperature for MOCVD was varied from 450 °C to 600 °C to examine its effect on the structural, magnetic, and ferroelectric properties. The substrate temperature affects the compressive stress at the interface between the CFO and BNEuT. The surface morphology changed drastically above 550 °C. The room temperature magnetization-magnetic field hysteresis loops for the films showed clear ferromagnetic hysteresis loop and magnetic shape anisotropy. The room temperature polarization-electric field (P-E) hysteresis loops for the films showed a clear ferroelectric hysteresis loop, and slightly leaky P-E hysteresis loop. The coercive field increased slightly with increasing substrate temperature. Judging from the structural, ferromagnetic, and ferroelectric properties, the film deposited at 550 °C has potential as an excellent multiferroic material.
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