Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO

Zhen Zhou, N. Sato, T. Komaki, A. Koizumi, T. Komori, M. Morinaga, Y. Fujiwara, Y. Takeda

研究成果: Conference article査読

抄録

The wide band-gap semiconductor, ZnO, has been proposed as one of the good host for Er3+ ions. In this investigation S was doped into the Er-containing ZnO specimens through the heat treatment in a H2S gas atmosphere. After sulfurization, the photoluminescence (PL) peak centered at 675nm from the ZnO host became much weaker, and accordingly the absorption peaks of Er3+ at 526nm, 50nm, and 665 nm became weaker. Also, the PL intensity around 1.54μm decreased after the sulfurization. However, when the sulfurized specimens were annealed at 1000°C in air, the PL intensity increased by about 3 times. The effects could be due to the modification of the local structure around the Er3+ ions in ZnO.

本文言語English
ページ(範囲)1125-1128
ページ数4
ジャーナルMaterials Science Forum
475-479
II
DOI
出版ステータスPublished - 2005 1 1
イベントPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
継続期間: 2004 11 22004 11 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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