Effects of process-induced mechanical stress on ESD performance

K. Kubota, K. Okuyama, Hideo Miura, Y. Kawashima, H. Ishizuka, C. Hashimoto

研究成果: Conference article査読

1 被引用数 (Scopus)


We studied the generation of dislocations during an ESD event by electrothermal and mechanical stress simulations based on analysis of critical mechanical stress for defect formation. We found the local thermal stress by ESD generates dislocations cooperatively with the residual mechanical stress in the Si substrate due to field oxidation. This means that process-induced mechanical stress is another key factor for controlling ESD performance, which will be important especially in low-power applications with severe leak requirements.

ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1995 12 1
イベントProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
継続期間: 1995 6 61995 6 8

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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