The ZrNiSn-based half-Heusler compounds crystallize in a cubic structure of the MgAgAs type, and belong to semiconductors with narrow band gaps. Due to promising potential as new thermoelectric materials, they have attracted much attention in recent years. In present paper, compounds with Pd partial substitution on the Ni sites, were successfully synthesized by solid state reaction method. Effects of such substitution on the thermoelectric properties were mainly studied. It is shown that, the substitution of Pd for Ni resulted in a significant reduction in the thermal conductivity. The Seebeck coefficient also decreased, but only by a small amount. In a Hf0.5Zr0.5Ni0.8Pd0.2 Sn0.99Sb0.01 compound, a power factor of 19.5 μW/cm-K2 and a thermal conductivity as low as of 4.5 W/m-K were measured at room temperature. The dimensionless figure of merit, ZT, increased with increasing temperature and reached a maximum value of 0.7 at about 800K.
|出版ステータス||Published - 2001 12月 1|
|イベント||20th International Conference on Thermoelectrics ICT'01 - Beijing, China|
継続期間: 2001 6月 8 → 2001 6月 11
|Other||20th International Conference on Thermoelectrics ICT'01|
|Period||01/6/8 → 01/6/11|
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