Effects of nitrogen on GaAsP light-emitting diodes

Tadashige Sato, Megumi Imai

研究成果: Article

2 引用 (Scopus)


The effects of nitrogen on GaAsP light-emitting diodes grown by hydride vapor phase epitaxy are described. Nitrogen acts as an isoelectronic trap and this localized state makes GaAsP a widely used material for from-yellow-to-red visible light-emitting diodes. The photoluminescence and electroluminescence spectra, brightness, and reliability were investigated systematically in line with the function of nitrogen concentration, from 0 (without nitrogen) to 2.3×10 19cm -3. When the nitrogen concentration reached 2.3×10 19cm -3, the total emission in the photoluminescence spectrum at 4.2 K showed a redshift. The study provides clarification of the effects of nitrogen on the diodes and demonstrates that the characteristics of the diodes strongly depend on the nitrogen concentration.

ジャーナルJournal of Applied Physics
発行部数10 I
出版物ステータスPublished - 2002 5 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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