Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxides

Hiroyoshi Momida, Tomoyuki Hamada, Takenori Yamamoto, Tsuyoshi Uda, Naoto Umezawa, Toyohiro Chikyow, Kenji Shiraishi, Takahisa Ohno

研究成果: Article査読

24 被引用数 (Scopus)

抄録

We have theoretically shown that doping of N atoms increases the dielectric constant of the Hf silicates, enhancing both the electronic and lattice polarization contributions. The enhancement of the lattice contribution is dominant and is attributed to low-frequency vibration modes induced by the N doping. It is found that Hf and Si ions bonded to N atoms located at O vacancies largely vibrate in the modes and play a crucial role in the enhancement. Doped N atoms are shown to also improve the electric characteristic of the silicates, elevating O vacancy levels appearing in the band gap of the silicates.

本文言語English
論文番号112903
ジャーナルApplied Physics Letters
88
11
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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