Effects of voltage application to the substrate during microcrystalline diamond film formation by combustion-flame method have been investigated. When a negative voltage above 100 V was applied to the substrate with respect to the torch, both the growth rate and the deposited area increased. Especially, a multi-stepped increase of the biasing voltage presented remarkable effects, which include the increase of the growth rate by 300% and of the deposited area by 15%. These effects most probably come from the energetic ion showering, which may result in the enhanced surface migration of diamond precursors and/or the selective elimination of surface graphites.
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