Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy

Ryohei Nonoda, Kanako Shojiki, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka

研究成果: Article

2 引用 (Scopus)

抜粋

The effects of growth conditions such as Mg/Ga and V/III ratios on the properties of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy were studied. Photoluminescence spectra from Mg-doped GaN depended on Mg/Ga and V/III ratios. For the lightly doped samples, the band-to-acceptor emission was observed at 3.3 eV and its relative intensity decreased with increasing V/III ratio. For the heavily doped samples, the donor-acceptor pair emission was observed at 2.8 eV and its peak intensity monotonically decreased with V/III ratio. The hole concentration was maximum for the Mg/Ga ratio. This is the same tendency as in group-III polar (0001) growth. The V/III ratio also reduced the hole concentration. The higher V/III ratio reduced the concentration of residual donors such as oxygen by substituting nitrogen atoms. The surface became rougher with increasing V/III ratio and the hillock density increased.

元の言語English
記事番号05FE01
ジャーナルJapanese journal of applied physics
55
発行部数5
DOI
出版物ステータスPublished - 2016 5 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000-1) p-type GaN grown by metalorganic vapor phase epitaxy' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用