Effects of metal buffer layer on the morphology of the ZnO columns

Xia Feng, Xiaoli Yuan, Takashi Sekiguchi, Masami Terauchi, Shin Tsunekawa, Shun Ito, Junyong Kang

研究成果: Conference contribution

抄録

ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.

本文言語English
ホスト出版物のタイトル2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
ページ156-159
ページ数4
DOI
出版ステータスPublished - 2005 12 1
イベント2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China
継続期間: 2004 9 202004 9 25

出版物シリーズ

名前IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
2005

Other

Other2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
CountryChina
CityBeijing
Period04/9/2004/9/25

ASJC Scopus subject areas

  • Engineering(all)

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