Effects of low energy e-beam irradiation on cathodoluminescence from GaN

S. Suihkonen, H. Nykänen, T. Tanikawa, M. Yamaguchi, Y. Honda, H. Amano

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We present cathodoluminescence (CL) studies on low energy e-beam irradiated (LEEBI) metal-organic vapor phase epitaxy (MOVPE) grown GaN films. High intensity LEEBI has been reported to reduce the band-edge photoluminescence intensity of MOVPE grown GaN films. Here we observe similar reduction of band-edge CL intensity with increasing LEEBI dose. The irradiation damage is found to be concentrated in the LEEBI energy dissipation depth by CL depth profiling. We have previously attributed the LEEBI induced reduction of band-edge intensity to the activation of in-grown Ga-vacancies. Here we observe no increase in the relative intensity of defect related yellow or blue CL emission peaks in the LEEBI treated samples. This indicates that blue or yellow emission in undoped GaN is not related to in-grown Ga-vacancies.

本文言語English
ページ(範囲)383-385
ページ数3
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
210
2
DOI
出版ステータスPublished - 2013 2 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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