Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions: A first-principles study

研究成果: Article査読

45 被引用数 (Scopus)

抄録

We investigate the effects of spin-flip scattering on tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) with half-metallic Co2MnSi (CMS) and MgO on the basis of the first-principles calculations. We found that noncollinear magnetic structures of interfacial Co spin moments resulting from the thermal fluctuations cause spin-flip scattering, leading to a significant reduction of the TMR. Interface states originating from a projection of the majority-spin Δ1 states of CMS in the minority-spin half-metallic gap because of the interfacial noncollinear magnetic structures play an important role in the spin-flip process. From these results, together with an estimated interfacial exchange stiffness constant, we conclude that the TMR ratio at room temperature in MTJs with half-metallic Co-based full-Heusler alloys can be attributed to the spin-flip scattering by the interfacial noncollinear magnetic structures as a result of the thermal fluctuation.

本文言語English
論文番号214411
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
83
21
DOI
出版ステータスPublished - 2011 6 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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「Effects of interfacial noncollinear magnetic structures on spin-dependent conductance in Co<sub>2</sub>MnSi/MgO/Co<sub>2</sub>MnSi magnetic tunnel junctions: A first-principles study」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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