Effects of interfacial layer structures on crystal structural properties of ZnO films

J. S. Park, T. Minegishi, S. H. Lee, I. H. Im, S. H. Park, T. Hanada, T. Goto, M. W. Cho, T. Yao, S. K. Hong, J. H. Chang

研究成果: Article査読

27 被引用数 (Scopus)

抄録

Single crystalline ZnO films were grown on Cr compound buffer layers on (0001) Al2 O3 substrates by plasma assisted molecular beam epitaxy. In terms of lattice misfit reduction between ZnO and substrate, the CrN and Cr2 O3 /CrN buffers are investigated. The structural and optical qualities of ZnO films suggest the feasibility of Cr compound buffers for high-quality ZnO films growth on (0001) Al2 O3 substrates. Moreover, the effects of interfacial structures on selective growth of different polar ZnO films are investigated. Zn-polar ZnO films are grown on the rocksalt CrN buffer and the formation of rhombohedral Cr2 O3 results in the growth of O-polar films. The possible mechanism of polarity conversion is proposed. By employing the simple patterning and regrowth procedures, a periodical polarity converted structure in lateral is fabricated. The periodical change of the polarity is clearly confirmed by the polarity sensitive piezo response microscope images and the opposite hysteretic characteristic of the piezo response curves, which are strict evidences for the validity of the polarity controlling method as well as the successful fabrication of the periodical polarity controlled ZnO structure.

本文言語English
ページ(範囲)90-96
ページ数7
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
26
1
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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