Effects of interface roughness on the local valence electronic structure at the SiO2/Si interface: Soft X-ray absorption and emission study

Y. Yamashita, S. Yamamoto, K. Mukai, J. Yoshinobu, Y. Harada, T. Tokushima, Y. Takata, S. Shin

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We investigated effects of interface roughness on the local valence electronic structures at SiCVSi interface in order to clarify the relation between interface structures and interface electronic properties, by using soft X-ray absorption and emission spectroscopy. For atomically smooth interface, the local valence structures depend on intermediate oxidation states at the interface. For atomically rough interface, on the other hand, the local valence structures at the interface show amorphous-like electronic states irrespective of the intermediated oxidation states.

本文言語English
ホスト出版物のタイトルProceedings - ICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
ページ259-262
ページ数4
DOI
出版ステータスPublished - 2006 3月
外部発表はい
イベントICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces - Aix-en-Provence, France
継続期間: 2005 7月 32005 7月 8

出版物シリーズ

名前Journal De Physique. IV : JP
132
ISSN(印刷版)1155-4339
ISSN(電子版)1764-7177

Other

OtherICFSI-10 - 10th International Conference on the Formation of Semiconductor Interfaces
国/地域France
CityAix-en-Provence
Period05/7/305/7/8

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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