Effects of hydrogen and bias on single-crystal A1 growth on vicinal Si by dc magnetron sputtering

Shin Yokoyama, Hiroshi Ichikawa, Yoshiyuki Ichikawa, Mitsumasa Koyanagi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The crystallinity of single-crystal Al(110) film grown on a vicinal Si(100) substrate has been improved by adding a small amount of hydrogen (0.5%) into the sputtering gas (Ar) and applying a positive substrate bias voltage. By utilizing these effects and grazing incidence growth, the growth temperature can be lowered to ≤200°C, resulting in a better surface morphology. The excess amount of hydrogen (5%) and negative substrate bias cause degradation of the film quality. The growth model involving the roles of hydrogen and substrate bias has also been proposed.

本文言語English
ページ(範囲)459-461
ページ数3
ジャーナルJapanese journal of applied physics
33
1
DOI
出版ステータスPublished - 1994
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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