Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV

K. W. Lee; C. Nagai; A. Nakamura; Jichoru Be; M. Murugesan; Takafumi Fukushima; Tetsu Tanaka; M. Koyanagi

doi:10.1109/3DIC.2014.7152153

Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV

K. W. Lee, C. Nagai, A. Nakamura, Jichoru Be, M. Murugesan, Takafumi Fukushima, Tetsu Tanaka, M. Koyanagi

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

Effects of electro-less Ni layer as barrier/seed layers were evaluated for high reliable and low cost Cu TSVs. To electrically characterize the effectiveness of a Ni layer as barrier/seed layers for TSV application, we fabricated the trench MOS capacitor with 5μm dia. and 50μm depth TSV array. Via holes were successfully filled by Cu electroplating by using Ni seed layer. To characterize the blocking property of the Ni layer to Cu diffusion, Cu atoms were intentionally diffused from Cu TSV by annealing at 300°C and 400°C. X-ray spectrometer (EDX) and C-t analysis results shows that Cu atoms not diffuse into t h e Si substrate via the Ni layer even after annealing at 400°C. The Ni barrier layer has good blocking properties compared to a PVD barrier layer.

本文言語	English
ホスト出版物のタイトル	2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（印刷版）	9781479984725
DOI	https://doi.org/10.1109/3DIC.2014.7152153
出版ステータス	Published - 2014
イベント	International 3D Systems Integration Conference, 3DIC 2014 - Kinsdale, Ireland 継続期間: 2014 12 1 → 2014 12 3

Other

Other	International 3D Systems Integration Conference, 3DIC 2014
Country	Ireland
City	Kinsdale
Period	14/12/1 → 14/12/3

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Hardware and Architecture

文献へのアクセス

10.1109/3DIC.2014.7152153

フィンガープリント「Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Lee, K. W., Nagai, C., Nakamura, A., Be, J., Murugesan, M., Fukushima, T., Tanaka, T., & Koyanagi, M. (2014). Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV. In 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings [07152153] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/3DIC.2014.7152153

Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV. / Lee, K. W.; Nagai, C.; Nakamura, A.; Be, Jichoru; Murugesan, M.; Fukushima, Takafumi ; Tanaka, Tetsu; Koyanagi, M.

2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. 07152153.

研究成果: Conference contribution

Lee, KW, Nagai, C, Nakamura, A, Be, J, Murugesan, M, Fukushima, T , Tanaka, T & Koyanagi, M 2014, Effects of electro-less Ni layer as barrier/seed layers for high reliable and low cost Cu TSV. in 2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings., 07152153, Institute of Electrical and Electronics Engineers Inc., International 3D Systems Integration Conference, 3DIC 2014, Kinsdale, Ireland, 14/12/1. https://doi.org/10.1109/3DIC.2014.7152153

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