Effects of deposition conditions on the ferroelectric properties of (Al1- x Sc x)N thin films

Shinnosuke Yasuoka, Takao Shimizu, Akinori Tateyama, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yoshiomi Hiranaga, Yasuo Cho, Hiroshi Funakubo

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The ferroelectricity of (Al1-xScx)N (x = 0-0.34) thin films with various thicknesses was investigated. (Al1-xScx)N films were prepared at 400 °C on (111)Pt/TiOx/SiO2/(001)Si substrates by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas or a mixture of N2 and Ar gases. The film deposited under N2 gas showed larger remanent polarization than those under N2 + Ar mixture. Ferroelectricity was observed for films with x = 0.10-0.34 for about 140-nm-thick films deposited under N2 gas. The x = 0.22 films showed ferroelectricity down to 48 nm in thickness from the polarization-electric field curves and the positive-up-negative-down measurement. The ferroelectricity of the 9 nm-thick film also was ascertained from scanning nonlinear dielectric microscopy measurement. These results reveal that ferroelectric polarization can switch for films with much broader compositions and thicknesses than those in the previous study.

本文言語English
論文番号114103
ジャーナルJournal of Applied Physics
128
11
DOI
出版ステータスPublished - 2020 9 21

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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