Effects of C/Si ratio on the structure of β-SiC film by halide CVD

Mingxu Han, Wei Zhou, Dingheng Zheng, Rong Tu, Song Zhang, Takashi Goto

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4 as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h-1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

本文言語English
ホスト出版物のタイトルAdvanced Ceramics and Novel Processing
出版社Trans Tech Publications Ltd
ページ227-231
ページ数5
ISBN(印刷版)9783038351306
DOI
出版ステータスPublished - 2014
イベント5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013 - Wuhan, China
継続期間: 2013 12 92013 12 12

出版物シリーズ

名前Key Engineering Materials
616
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

Other5th International Symposium on Advanced Ceramics, ISAC 2013 and 3rd International Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2013
国/地域China
CityWuhan
Period13/12/913/12/12

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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