Cu-In precursor films with a Cu/In atomic ratio approaching 1 were prepared using middle frequency A. C. magnetron sputtering with a Cu-In alloy target to investigate local agglomeration in Cu-In alloy layers and its effects on the element distributions and microstructure of selenized CuInSe2 (CIS) films. CIS absorbers for solar cells were formed by the selenization process in a selenium atmosphere. Scanning electron microscopy and energy dispersive X-ray analysis were used to observe the surface morphologies and determine the compositions of both the Cu-In precursor films and the CIS films. Their microstructures were characterized by X-ray diffraction and Raman spectroscopy. The results show that the Cu-In alloy films are mainly composed of a Cu11In9 phase with an in-rich solid solution appearing as particles in the films. Stoichiometric CIS film can be synthesized with a homogeneous element distribution and a single chalcopyrite phase from the Cu-In precursor film with a Cu/In atomic ratio of 1. The CIS film exhibits p-type conduction and has a resistivity reaching 1.2 kΩ·cm.
|ジャーナル||Qinghua Daxue Xuebao/Journal of Tsinghua University|
|出版ステータス||Published - 2004 5月|
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