Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon

Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Satoshi Uda

研究成果: Article査読

19 被引用数 (Scopus)

抄録

We investigated the effects of B/Ge codoping on the minority carrier lifetime in gallium (Ga)-doped Czochralski-silicon (CZ-Si) crystals. Minority carrier lifetime decreased from 28 to 0.1 μs when the B concentration was increased from 1× 1015 to 1× 1017 cm-3 in Ga/B codoped CZ-Si crystals. The minority carrier lifetime increased from 30 to 76 μs with increasing Ge concentration from 1× 1017 to 2× 1020 cm-3 in Ga/Ge codoped CZ-Si crystals. Light-induced degradation experiments showed that Ga/B codoped CZ-Si degraded rapidly, while Ga/Ge codoped CZ-Si showed no degradation. Moreover, the flow pattern defect density related to grown-in microdefects in as-grown Ga/Ge codoped CZ-Si decreased with increasing Ge concentration. The experimental results are explained using a defect reaction model based on the formation of Ge-vacancy-oxygen dimer complexes in the CZ-Si crystal during postgrowth cooling.

本文言語English
論文番号013721
ジャーナルJournal of Applied Physics
106
1
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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