Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Effects of AsH3 surface treatment just prior to regrowth on ultrashallow (49 nm) p+n+ GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm-2, and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH3 surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.

本文言語English
ページ(範囲)G131-G135
ジャーナルJournal of the Electrochemical Society
151
2
DOI
出版ステータスPublished - 2004

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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