Effective mobility and interface-state density of la2O 3 nMISFETs after post deposition annealing

Jin Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai

研究成果: Article査読

14 被引用数 (Scopus)

抄録

In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.

本文言語English
ページ(範囲)316-321
ページ数6
ジャーナルIEICE Electronics Express
3
13
DOI
出版ステータスPublished - 2006 7月 10
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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