In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different-post deposition annealing (PDA) conditions; annealing temperature (300°C - 600 °C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 10 10 cm-2/eV were obtained from La2O3 nMTSFET with equivalent oxide thickness (EOT) of 1.7 nm after PDA at 300 °C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6 A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-slate density is essential to oblain high mobility in the high-κ/Si structure.
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