Effect of V doping on initial growth of ZnO film on c-face sapphire substrate

Tomohiro Kanematsu, Hiroshi Chiba, Akihiro Watanabe, Shoya Usui, Tomoyuki Kawashima, Katsuyoshi Washio

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The effects of the vanadium (V) doping on the initial growth of ZnO films on a c-face sapphire substrate were investigated. The V-doped ZnO (VZO) films were grown at 200 °C by RF magnetron sputtering with various V concentration ranges. The unit cell volume of the VZO films became larger than that of the ZnO films, but the grain size of the VZO films shrank with a smooth surface. It was also found that the V doping enhanced c-axis alignment at the initial growth in the range of about 10–40 nm thick. Furthermore, it can be considered that V atoms were located at the interstitial sites in the state of V3+ from an analysis of the chemical binding states. Therefore, considering the effect of the V doping on the improvement in rotational symmetry of in-plane orientation, epitaxial alignment to the sapphire substrate was enhanced by the interstitial V incorporation.

本文言語English
ページ(範囲)229-233
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版ステータスPublished - 2017 11 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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