抄録
We report the effects of annealing temperature on the near-band-gap transmittance, the absorption coefficient, and the evolution of shallow-level defects of arsenic-ion-implanted GaAs (hereafter referred to as GaAs:As+) using Fourier-transform infrared spectroscopy. The maximum above-band-gap transmittance and absorption coefficient are determined to be 0.4 and 6 × 103 cm-1, respectively. An anomalous absorption peak at the photon energy of 1.37-1.4 eV for the GaAs:As+ samples annealed at lower than 500°C is observed. By either fitting the absorption curve, the band-gap energy of rapid-thermal-annealed GaAs:As+ is evaluated, which blue shifts from 1.36 eV to 1.41 eV as the annealing temperature increases from 300°C to 800°C. The slightly rising absorption spectra at the near-band-gap region suggest the existence of defects and scattering centers. The activation energies and formatting mechanisms of the dense defects in the Rapid-thermal-annealed GaAs:As+ samples were identified. By characterizing the differential absorption spectra, the eVolution of some defect-related absorption bands during the high-temperature annealing process were observed and the correlated structural phenomena were explained.
本文言語 | English |
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ページ(範囲) | 6226-6230 |
ページ数 | 5 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 40 |
号 | 11 |
出版ステータス | Published - 2001 11月 |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)