Effect of the vacuum degree on the orientation and the microstructure of β-SiC films prepared by laser chemical vapour deposition

Li Bin Li, Qi Li, Hirokazu Katsui, Takashi Goto, Rong Tu

研究成果: Comment/debate査読

2 被引用数 (Scopus)

抄録

β-SiC films were prepared on AlN substrates by laser chemical vapour deposition (LCVD) using a diode laser and hydrido-polycarbosilane as a precursor at different vacuum degrees. The effect of the vacuum degree on the orientation and the microstructure of the β-SiC films was investigated. The preferred orientation of β-SiC films shifted from (111) to (311), the surface morphologies changed from faceted to rectangular and the columnar cross-section became thicker while increasing the vacuum degree from 0.4 to 7 KPa. The high deposition rate ranged from 180 to 240 µm/h.

本文言語English
ページ(範囲)81-84
ページ数4
ジャーナルMaterials Letters
182
DOI
出版ステータスPublished - 2016 11 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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