Effect of the interface on the electrical properties of an indium zinc oxide/SiOx multilayer

Zhiyong Qiu, Ri ichi Murakami, Daisuke Yonekura, Jirou Ueno

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this work, indium zinc oxide (IZO) films have been deposited on a polyethylene terephthalate substrate coated with an SiOx film. Based on a comparative investigation of an IZO monolayer and an IZO/SiOx multilayer, it is shown that oxygen has a great effect on the electrical properties of the thin films. A mechanism is described to explain the influence of the introduced SiOx buffer layer. It is considered that an interfacial layer has come into being at the interface between the SiOx layer and IZO layer, and the properties of this layer have been evaluated. Moreover, the electrical properties of the IZO/SiOx multilayer have been successfully improved by controlling the oxygen content of the interfacial layer.

本文言語English
ページ(範囲)7259-7263
ページ数5
ジャーナルThin Solid Films
515
18
DOI
出版ステータスPublished - 2007 6月 25
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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