Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells

S. Keller, S. B. Fleischer, Shigefusa Chichibu, J. E. Bowers, U. K. Mishra, S. P. DenBaars

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The effect of different confinement layers on the luminescence of InGaN single quantum well structures grown by MOCVD was studied. The brightest photoluminescence was observed for samples with superlattice (SL) confinement layers with internal quantum efficiencies reaching 90%. Picosecond carrier transport and capture investigations using wavelength dependent pump-probe measurements indicated that the enhanced luminescence efficiency of the samples with SL cladding layers is caused by the capture of carriers from the SL confinement region. The "funneling" effect is discussed with respect to the confinement layer design in the individual structures and the carrier lifetime.

本文言語English
ページ(範囲)269-272
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
216
1
DOI
出版ステータスPublished - 1999 1 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル