Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

Kenji Shiojima; Takashi Makimura; Takashi Maruyama; Tetsuya Suemitsu; Naoteru Shigekawa; Masanobu Hiroki; Hamki Yokoyama

Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

Kenji Shiojima, Takashi Makimura, Takashi Maruyama, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Hamki Yokoyama

研究成果: Conference contribution

抄録

We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (f_T) and gate-source capacitance (C_gs) were characterized. The f_T increased monotonically as the gate length (L_g) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller f_T at all L_g. As for the relationship between C_gs and f_T, the data points for all three samples are on the same line, and the smaller-h devices show the smaller C_gs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.

本文言語	English
ホスト出版物のタイトル	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
出版社	Electrochemical Society Inc.
ページ	248-251
ページ数	4
版	2
ISBN（電子版）	9781607685395
出版ステータス	Published - 2006
外部発表	はい
イベント	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States 継続期間: 2005 10月 16 → 2005 10月 21

出版物シリーズ

名前	ECS Transactions
番号	2
巻	1
ISSN（印刷版）	1938-5862
ISSN（電子版）	1938-6737

Other

Other	43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
国/地域	United States
City	Los Angeles, CA
Period	05/10/16 → 05/10/21

ASJC Scopus subject areas

工学（全般）

他のファイルとリンク

引用スタイル

Shiojima, K., Makimura, T., Maruyama, T., Suemitsu, T., Shigekawa, N., Hiroki, M., & Yokoyama, H. (2006). Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (2 ed., pp. 248-251). (ECS Transactions; Vol. 1, No. 2). Electrochemical Society Inc..

Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts. / Shiojima, Kenji; Makimura, Takashi; Maruyama, Takashi その他.

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. p. 248-251 (ECS Transactions; Vol. 1, No. 2).

研究成果: Conference contribution

Shiojima, K, Makimura, T, Maruyama, T, Suemitsu, T, Shigekawa, N, Hiroki, M & Yokoyama, H 2006, Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts. in State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 edn, ECS Transactions, no. 2, vol. 1, Electrochemical Society Inc., pp. 248-251, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.

Shiojima K, Makimura T, Maruyama T, Suemitsu T, Shigekawa N, Hiroki M その他. Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts. In State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2 ed. Electrochemical Society Inc. 2006. p. 248-251. (ECS Transactions; 2).

Shiojima, Kenji ; Makimura, Takashi ; Maruyama, Takashi その他. / Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts. State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI. 2. ed. Electrochemical Society Inc., 2006. pp. 248-251 (ECS Transactions; 2).

@inproceedings{a66ffb875b764b56920f3aed75704fd6,

title = "Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts",

abstract = "We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.",

author = "Kenji Shiojima and Takashi Makimura and Takashi Maruyama and Tetsuya Suemitsu and Naoteru Shigekawa and Masanobu Hiroki and Hamki Yokoyama",

year = "2006",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "248--251",

booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",

edition = "2",

note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

}

TY - GEN

T1 - Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

AU - Shiojima, Kenji

AU - Makimura, Takashi

AU - Maruyama, Takashi

AU - Suemitsu, Tetsuya

AU - Shigekawa, Naoteru

AU - Hiroki, Masanobu

AU - Yokoyama, Hamki

PY - 2006

Y1 - 2006

N2 - We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.

AB - We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.

UR - http://www.scopus.com/inward/record.url?scp=32844475673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32844475673&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:32844475673

T3 - ECS Transactions

SP - 248

EP - 251

BT - State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

PB - Electrochemical Society Inc.

T2 - 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society

Y2 - 16 October 2005 through 21 October 2005

ER -

Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

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ASJC Scopus subject areas

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