Effect of T-shaped gate structure on RF characteristics of AlGaN/GaN short-gate hemts

Kenji Shiojima, Takashi Makimura, Takashi Maruyama, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Hamki Yokoyama

研究成果: Conference contribution

抄録

We investigated the RF performance of short-gate AlGaN/GaN HEMTs in conjunction with the T-shaped gate structure. The T-shaped gates with three different gate-foot heights (h ∼100 nm) were formed and the cut-off frequency (fT) and gate-source capacitance (Cgs) were characterized. The fT increased monotonically as the gate length (Lg) decreased from 0.4 to 0.1 μn and the smaller-h devices showed smaller fT at all Lg. As for the relationship between Cgs and fT, the data points for all three samples are on the same line, and the smaller-h devices show the smaller Cgs. These results indicate that a stray capacitance at the source side of the gate top has a great effect on the RF characteristics in this device dimension.

本文言語English
ホスト出版物のタイトルState-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
出版社Electrochemical Society Inc.
ページ248-251
ページ数4
2
ISBN(電子版)9781607685395
出版ステータスPublished - 2006
外部発表はい
イベント43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10 162005 10 21

出版物シリーズ

名前ECS Transactions
番号2
1
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
国/地域United States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • 工学(全般)

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