Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient

Tomiyuki Arakawa; Yoshio Yamashita; Hiroshi Hoga; Shuichi Noda; Hisashi Fukuda

doi:10.1063/1.110146

Effect of synchrotron radiation on electrical characteristics of SiO _xN_y thin films formed by rapid thermal processing in a N₂O ambient

Tomiyuki Arakawa, Yoshio Yamashita, Hiroshi Hoga, Shuichi Noda, Hisashi Fukuda

マイクロシステム融合研究開発センター

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

The synchrotron radiation durability of SiO_xN_y films (about 10 nm) formed by rapid thermal processing in a N₂O ambient was studied. No significant difference between the flat-band voltage of SiO _xN_y-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm², and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

本文言語	English
ページ（範囲）	3364-3366
ページ数	3
ジャーナル	Applied Physics Letters
巻	63
号	24
DOI	https://doi.org/10.1063/1.110146
出版ステータス	Published - 1993 12 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.110146

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引用スタイル

@article{a16a1cbd97b34d8d956cde7174a9edf3,

title = "Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient",

abstract = "The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.",

author = "Tomiyuki Arakawa and Yoshio Yamashita and Hiroshi Hoga and Shuichi Noda and Hisashi Fukuda",

year = "1993",

month = dec,

day = "1",

doi = "10.1063/1.110146",

language = "English",

volume = "63",

pages = "3364--3366",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Effect of synchrotron radiation on electrical characteristics of SiO xNy thin films formed by rapid thermal processing in a N2O ambient

AU - Arakawa, Tomiyuki

AU - Yamashita, Yoshio

AU - Hoga, Hiroshi

AU - Noda, Shuichi

AU - Fukuda, Hisashi

PY - 1993/12/1

Y1 - 1993/12/1

N2 - The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

AB - The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=3943061409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3943061409&partnerID=8YFLogxK

U2 - 10.1063/1.110146

DO - 10.1063/1.110146

M3 - Article

AN - SCOPUS:3943061409

VL - 63

SP - 3364

EP - 3366

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -