抄録
The synchrotron radiation durability of SiOxNy films (about 10 nm) formed by rapid thermal processing in a N2O ambient was studied. No significant difference between the flat-band voltage of SiO xNy-metal-oxide semiconductors (MOS) capacitors patterned by synchrotron radiation lithography (SR-MOS) and that of capacitors patterned by conventional optical lithography (OP-MOS) was observed. The midgap interface state density of the SR-MOS was approximately one order of magnitude larger than that of the OP-MOS. The differences between the SR-MOS and the OP-MOS were nearly independent of the SR dose in the range of 540-2700 mJ/cm2, and were eliminated by annealing in a hydrogen ambient at 400°C for 30 min.
本文言語 | English |
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ページ(範囲) | 3364-3366 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 63 |
号 | 24 |
DOI | |
出版ステータス | Published - 1993 12 1 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)