Effect of substrate temperature on the properties of heavily Mn-doped GaAs

H. J. Lee, D. Chiba, F. Matsukura, H. Ohno

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.

本文言語English
ページ(範囲)264-267
ページ数4
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータスPublished - 2007 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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