TY - JOUR
T1 - Effect of substrate temperature on the properties of heavily Mn-doped GaAs
AU - Lee, H. J.
AU - Chiba, D.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was in part supported by the IT Program of RR2002 from MEXT.
PY - 2007/4
Y1 - 2007/4
N2 - We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.
AB - We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 °C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 °C were influenced strongly by As overpressure and Mn doping.
KW - A1. RHEED
KW - A3. High-temperature growth
KW - A3. Molecular beam epitaxy
KW - B1. (Ga,Mn)As
KW - B2. Diluted magnetic semiconductor
KW - B2. III-V semiconductor
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U2 - 10.1016/j.jcrysgro.2006.11.155
DO - 10.1016/j.jcrysgro.2006.11.155
M3 - Article
AN - SCOPUS:33947315430
VL - 301-302
SP - 264
EP - 267
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -