A method of realizing Si surfaces without step lines in predetermined areas surrounded by SiO2 fences was investigated. The SiO2 fence blocked the atomic step flow during chemical etching of the Si surface. Atomic step flow in the downside of the SiO2 fences stopped at the SiO2 fences, while atomic step flow in the upside of the SiO2 fences during the chemical etching of the Si surface was able to progress. This technique is applicable to the fabrication of nanodevices in any predetermined area isolated with SiO2 regions.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2003 5 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)