抄録
A comparative study of the optical and electrical properties of poly(methylphenylsilylene) and poly(phenylsilyne) was carried out. Poly(phenylsilyne), which has a Si-network structure, showed a broad absorption band extending to 420 nm, while poly(methylphenylsilylene) with a linear Si skeleton showed a sharp σ-σ* absorption band at 334 nm. The broad emission spectrum and the low fluorescence quantum yield of poly(phenylsilyne) suggest a distribution of trapping sites in the Si skeleton. The network poly(phenylsilyne) did not show an improvement in electric conductivity because of the carrier trapping at the sites. Molecular weight measurements on poly(methylphenylsilylene) after iodine doping showed that cleavage of SiSi bonds occurs with extensive doping.
本文言語 | English |
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ページ(範囲) | 191-196 |
ページ数 | 6 |
ジャーナル | Synthetic Metals |
巻 | 74 |
号 | 3 |
DOI | |
出版ステータス | Published - 1995 10月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 材料力学
- 機械工学
- 金属および合金
- 材料化学