Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor

S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

An effect of the time constant of the measurement setup on a breakdown behavior of SiC MOS capacitors with aluminum gate electrode was investigated. For this experiment, an additional series resistance was inserted into the TDDB and TZDB measurement system. With respect to TDDB, SBD occurred more frequently when the additional series resistance was inserted. It is speculated that the joule heat generated at the moment of breakdown was not sufficient to form a low resistance conduction path between the gate electrode and substrate. With respect to TZDB, a sequential formation of separated groups of concaves was observed when the additional series resistance was inserted. It is speculated that the post-breakdown resistance was high enough to cause 'self-healing' as observed in the TDDB measurement. These results highlight the generation and dissipation of the heat at the time of the breakdown is one of the causes that determine HBD or SBD of SiC MOS capacitors.

本文言語English
ホスト出版物のタイトルProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ72-75
ページ数4
ISBN(電子版)9781479999286, 9781479999286
DOI
出版ステータスPublished - 2015 8 25
イベント22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan, Province of China
継続期間: 2015 6 292015 7 2

出版物シリーズ

名前Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

Other

Other22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
国/地域Taiwan, Province of China
CityHsinchu
Period15/6/2915/7/2

ASJC Scopus subject areas

  • 電子工学および電気工学

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