Effect of Pressure on Microstructure of -Oriented β-SiC Films: Research via Electron Backscatter Diffraction

Song Zhang, Qingfang Xu, Qingyun Sun, Peipei Zhu, Rong Tu, Zhiying Hu, Mingxu Han, Takashi Goto, Lianmeng Zhang, Jiasheng Yan, Shusen Li

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Scanning electron microscopy (SEM) and high-resolution electron backscatter diffraction (EBSD) has been employed to study the microstructure development of -oriented β-SiC films prepared by laser chemical vapor deposition (LCVD) with various total pressure (Ptot). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the Ptot. The EBSD results indicated that the higher Ptot (800 Pa) led to the lower neighbor-pair misorientation and large in-plane domains in β-SiC films.

本文言語English
ページ(範囲)3713-3718
ページ数6
ジャーナルJournal of the American Ceramic Society
98
12
DOI
出版ステータスPublished - 2015 12 1

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 材料化学

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