Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Taishi Takenobu; Kazuhiro Watanabe; Yohei Yomogida; Hidekazu Shimotani; Yoshihiro Iwasa

doi:10.1063/1.2969772

Effect of postannealing on the performance of pentacene single-crystal ambipolar transistors

Taishi Takenobu, Kazuhiro Watanabe, Yohei Yomogida, Hidekazu Shimotani, Yoshihiro Iwasa

理学研究科・物理学専攻

研究成果: Article › 査読

37 被引用数 (Scopus)

抄録

Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.

本文言語	English
論文番号	073301
ジャーナル	Applied Physics Letters
巻	93
号	7
DOI	https://doi.org/10.1063/1.2969772
出版ステータス	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

文献へのアクセス

10.1063/1.2969772

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引用スタイル

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AU - Iwasa, Yoshihiro

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AB - Ambipolar organic field-effect transistors (OFETs) with comparable hole and electron mobilities were fabricated using pentacene single crystals. Ambipolar single-crystal transistors enable us to determine the intrinsic effect of postannealing on the performance of OFETs, which remains controversial. The results confirm that postannealing predominantly causes hole dedoping due to oxygen desorption.

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