Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/ n +-Si on insulator devices

Ajay Tiwari, Tomoaki Inokuchi, Mizue Ishikawa, Hideyuki Sugiyama, Nobuki Tezuka, Yoshiaki Saito

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The post annealing temperature dependence of spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (TA) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to TA < 400°C, however a slight decrease above TA ≥ 400°C is observed. This behavior is consistent with the TA dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals and the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co2FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and TA = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.

本文言語English
論文番号075119
ジャーナルAIP Advances
6
7
DOI
出版ステータスPublished - 2016 7 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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