The effect of phosphorus-doping on crystallization-induced stress of silicon thin films is discussed experimentally. Amorphous silicon thin films are deposited on thermally oxidized silicon substrates using chemical vapor deposition. Phosphorus is doped to the film during film deposition. The initial residual stress of the phosphorus doped films is constant at —200 MPa, regardless of dopant concen- tration. The internal stress of the films changes to tensile stress of 800 MPa during crystallization due to film shrinkage. Although the magnitude of the stress change is independent of the dopant constant, crystallization temperature of the film decreases with increase of the dopant concentration. The doped phosphorus at the film/substrate interface affects the crystallization process, i. e., struc- ture and crystallinity of the film, of the silicon thin films. The substrate material also affects the crystallinity and crystallization-induced stress of the film.
|ジャーナル||Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A|
|出版ステータス||Published - 1995|
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